Measurement of intrinsic dirac fermion cooling on the surface of the topological insulator Bi2Se3 using time-resolved and angle-resolved photoemission spectroscopy.
نویسندگان
چکیده
We perform time- and angle-resolved photoemission spectroscopy of a prototypical topological insulator (TI) Bi(2)Se(3) to study the ultrafast dynamics of surface and bulk electrons after photoexcitation. By analyzing the evolution of surface states and bulk band spectra, we obtain their electronic temperature and chemical potential relaxation dynamics separately. These dynamics reveal strong phonon-assisted surface-bulk coupling at high lattice temperature and total suppression of inelastic scattering between the surface and the bulk at low lattice temperature. In this low temperature regime, the unique cooling of Dirac fermions in TI by acoustic phonons is manifested through a power law dependence of the surface temperature decay rate on carrier density.
منابع مشابه
Measurement of Intrinsic Dirac Fermion Cooling on the Surface of the Topological Insulator Bi2Se3 Using Time- Resolved and Angle-Resolved Photoemission
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متن کاملAuxiliary Material for EPAPS: Measurement of intrinsic Dirac fermion cooling on the surface of a topological insulator Bi2Se3 using time- and angle-resolved photoemission spectroscopy
Two types of single crystal Bi2Se3 samples are prepared which allow us to span the surface doping range investigated in the main text. For the high doping level samples where ED = 0.28 eV below EF , stoichiometric mixture of Bi and Se are used. And for the low doping level samples where ED = 0.06 eV, the initial mixture of Bi:Se = 2:4.06 are used. ED in between these two levels are tuned throug...
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ورودعنوان ژورنال:
- Physical review letters
دوره 109 12 شماره
صفحات -
تاریخ انتشار 2012